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FDD16AN08_F085 Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FDD16AN08_F085 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
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4 / 11 page  Figure 5. Forward Bias Safe Operating Area NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics Figure 9. Drain to Source On Resistance vs Drain Current Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature Typical Characteristics T C = 25°C unless otherwise noted VDS, DRAIN TO SOURCE VOLTAGE (V) 0.1 1 10 100 1 10 100 500 TJ = MAX RATED TC = 25 oC SINGLE PULSE LIMITED BY rDS(ON) AREA MAY BE OPERATION IN THIS 10 µs 1ms DC 100 µs 10ms 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) STARTING TJ = 25 oC STARTING TJ = 150 oC 1 10 100 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R = 0 If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 0 25 50 75 100 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = 175 oC TJ = 25 oC TJ = -55 oC VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 6V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 5V TC = 25 oC VGS = 20V VGS = 10V 0 25 50 100 012 3 4 VGS = 7V 75 0.01 0.012 0.014 0.016 0.018 0.020 0.022 0 1020 30 4050 ID, DRAIN CURRENT (A) VGS = 6V VGS = 10V TJ, JUNCTION TEMPERATURE ( oC) VGS = 10V, ID =50A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0.5 1.0 1.5 2.0 2.5 -80 -40 0 40 80 120 160 200 FD D16AN08A0_F085 Rev. A1 www.fairchildsemi.com 4 |
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