IDT70V05S/L

HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM

COMMERCIAL TEMPERATURE RANGE

6.35

7

AC ELECTRICAL CHARACTERISTICS OVER THE

IDT70V05X25

IDT70V05X35

IDT70V05X55

Symbol

Parameter

Min.

Max.

Min.

Max.

Min.

Max.

Unit

WRITE CYCLE

Write Cycle Time

25

—

35

—

55

—

ns

Chip Enable to End-of-Write

(3)

20

—

30

—

45

—

ns

Address Valid to End-of-Write

20

—

30

—

45

—

ns

Address Set-up Time

(3)

0—

0

—

0

—

ns

Write Pulse Width

20

—

25

—

40

—

ns

Write Recovery Time

0

—

0

—

0

—

ns

Data Valid to End-of-Write

15

—

20

—

30

—

ns

Output High-Z Time

(1, 2)

—15

—

20

—

25

ns

Data Hold Time

(4)

0—

0

—

0

—

ns

Write Enable to Output in High-Z

(1, 2)

—15

—

20

—

25

ns

Output Active from End-of-Write

(1, 2, 4)

0—

0

—

0

—

ns

SEM Flag Write to Read Time

5

—

5

—

5

—

ns

SEM Flag Contention Window

5

—

5

—

5

—

ns

R/

W

CE

ADDR

OE

2941 drw 08

(4)

(4)

(4)

(1)

(2)

(3, 4)

VALID DATA

(4)

NOTES:

1. Timing depends on which signal is asserted last,

OE or CE.

2. Timing depends on which signal is de-asserted first,

CE or OE.

BUSY has no relation to valid output data.

5.

NOTES:

2941 tbl 12

1. Transition is measured

±200mV from Low or High-impedance voltage with Output Test Load (Figure 2).

2. This parameter is guaranteed by device characterization but not production tested.

3. To access RAM,

5. "X" in part numbers indicates power rating (S or L).