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IDT70V05S Datasheet(PDF) 2 Page - Integrated Device Technology |
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IDT70V05S Datasheet(HTML) 2 Page - Integrated Device Technology |
2 / 17 page 6.35 2 IDT70V05S/L HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM COMMERCIAL TEMPERATURE RANGE operation without the need for additional discrete logic. This device provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT’s CMOS high-performance technol- ogy, these devices typically operate on only 350mW of power. Low-power (L) versions offer battery backup data retention capability with typical power consumption of 500 µW from a 2V battery. The IDT70V05 is packaged in a ceramic 68-pin PGA, a 68- pin PLCC, and a 64-pin thin plastic quad flatpack (TQFP). PIN CONFIGURATIONS (1,2) 2941 drw 02 12 13 14 15 16 17 18 INDEX 19 20 21 22 987 6543 21 68 67 66 65 27 28 29 30 31 32 33 34 35 36 37 38 39 VCC I/O1R I/O2R I/O3R I/O4R INTL GND A4L A3L A2L A1L A0L A3R A0R A1R A2R I/O2L A5L 11 10 M/ S 23 24 25 26 40 41 42 43 58 57 56 55 54 53 52 51 50 49 48 59 60 47 46 45 44 64 63 62 61 I/O3L GND I/O0R VCC A4R BUSYL GND BUSYR INTR IDT70V05 J68-1 F68-1 PLCC / FLATPACK TOP VIEW(3) I/O4L I/O5L I/O6L I/O7L I/O5R I/O6R INDEX IDT70V05 PN-64 TQFP TOP VIEW(3) 8 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 46 45 44 43 42 41 40 39 38 37 36 35 34 47 48 33 I/O2L VCC GND GND A4R BUSYL BUSYR INTR INTL GND M/ S I/O3L I/O4L I/O5L I/O6L I/O7L I/O0R I/O1R I/O2R VCC I/O3R I/O4R I/O5R A3R A2R A1R A0R A0L A1L A2L A3L A4L 2941 drw 03 NOTES: 1. All Vcc pins must be connected to the power supply. 2. All GND pins must be connected to the ground supply. 3. This text does not indicate orientation of the actual part-marking. |
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