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UPA1720 Datasheet(PDF) 2 Page - NEC

Part # UPA1720
Description  SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

UPA1720 Datasheet(HTML) 2 Page - NEC

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Data Sheet G13888EJ2V0DS00
2
µµµµ PA1720
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 4.0 A
20.0
25.0
m
RDS(on)2
VGS = 4.5 V, ID = 4.0 A
25.5
33.0
m
RDS(on)3
VGS = 4.0 V, ID = 4.0 A
29.0
38.0
m
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 4.0 A
3.0
7.0
S
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
Gate to Source Leakage Current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
Input Capacitance
Ciss
VDS = 10 V
800
pF
Output Capacitance
Coss
VGS = 0 V
250
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
96
pF
Turn-on Delay Time
td(on)
ID = 4.0 A
20
ns
Rise Time
tr
VGS(on) = 10 V
80
ns
Turn-off Delay Time
td(off)
VDD = 15 V
40
ns
Fall Time
tf
RG = 10
40
ns
Total Gate Charge
QG
ID = 8 A
14
nC
Gate to Source Charge
QGS
VDD = 24 V
2.3
nC
Gate to Drain Charge
QGD
VGS = 10 V
3.6
nC
Body Diode Forward Voltage
VF(S-D)
IF = 8 A, VGS = 0 V
0.86
V
Reverse Recovery Time
trr
IF = 8 A, VGS = 0 V
30
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
µs40
nC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 µs
Duty Cycle
1 %
τ
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
0
90 %
90 %
90 %
VGS(on)
ID
ton
toff
td(on)
tr
td(off)
tf
10 %10 %


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