UPA1720 datasheet(1/8 Pages) NEC

Part #	UPA1720

Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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©

1998, 1999

MOS FIELD EFFECT TRANSISTOR

µµµµ PA1720

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DATA SHEET

Document No.

G13888EJ2V0DS00 (2nd edition)

Date Published

March 2000 NS CP(K)

Printed in Japan

The mark 5 shows major revised points.

DESCRIPTION

The

µ PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management

application of notebook computers.

FEATURES

• Low On-Resistance

RDS(on)1 = 25.0 m

Ω MAX. (VGS = 10 V, ID = 4.0 A)

RDS(on)2 = 33.0 m

Ω MAX. (VGS = 4.5 V, ID = 4.0 A)

RDS(on)3 = 38.0 m

Ω MAX. (VGS = 4.0 V, ID = 4.0 A)

• Low Ciss : Ciss = 800 pF TYP.

• Built-in G-S Protection Diode

• Small and Surface Mount Package (Power SOP8)

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA1720G

Power SOP8

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)

Drain to Source Voltage (VGS = 0)

VDSS

30

V

Gate to Source Voltage (VDS = 0)

VGSS

±20

V

Drain Current (DC)

ID(DC)

±8

A

Drain Current (Pulse)

Note1

ID(pulse)

±32

A

Total Power Dissipation (TA = 25 °C)

Note2

PT

2.0

W

Single Avalanche Current

Note3

IAS

8.0

A

Single Avalanche Energy

Note3

EAS

6.4

mJ

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to + 150

°C

Notes 1. PW

≤ 10

µs, Duty cycle ≤ 1 %

2. Mounted on ceramic substrate of 1200 mm

2 x 2.2 mm

3. Starting Tch = 25 °C, RG = 25

Ω, VGS = 20 V → 0 V

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