©

1998

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DATA SHEET

Document No.

G13436EJ1V0DS00 (1st edition)

Date Published

November 1998 NS CP(K)

Printed in Japan

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management

switch.

FEATURES

• Low on-resistance

• Built-in G-S protection diode

• Small and surface mount package (Power SOP8)

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA1709G

Power SOP8

40

V

±25

V

Drain Current (DC)

±9.0

A

Drain Current (pulse)

Note1

±36

A

Note2

2.0

W

Channel Temperature

150

°C

Storage Temperature

–55 to + 150

°C

Notes 1. PW

≤ 10

µ s, Duty Cycle ≤ 1 %

2. Mounted on ceramic substrate of 1200 mm

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

EQUIVARENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

PACKAGE DRAWING (Unit : mm)

1.27

0.12 M

6.0 ±0.3

4.4

0.40

+0.10

–0.05

0.78 Max.

0.8

0.5 ±0.2

5.37 Max.

0.10

14

85

1,2,3

4

5,6,7,8

; Source

; Gate

; Drain