HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6517

Issued Date : 1995.02.11

Revised Date : 2002.12.16

Page No. : 1/4

HSC945

HSMC Product Specification

HSC945

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HSC945 is designed for using driver stage of AP amplifier and

low speed switching applications.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -50 ~ +150

°C

Junction Temperature ...................................................................................... 150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 250 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 60 V

VCEO Collector to Emitter Voltage ...................................................................................... 50 V

VEBO Emitter to Base Voltage .............................................................................................. 5 V

IC Collector Current........................................................................................................ 100 mA

IB Base Current ................................................................................................................ 50 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

60

-

-

V

IC=100uA, IE=0

BVCEO

50

-

-

V

IC=1mA. IB=0

BVEBO

5

-

-

V

IE=10uA. IC=0

ICBO

-

-

100

nA

VCB=60V, IE=0

IEBO

-

-

100

nA

VEB=5V, IB=0

*VCE(sat)

-

0.1

0.3

V

IC=100mA, IB=10mA

*hFE1

50

-

-

VCE=6V, IC=0.1mA

*hFE2

135

-

600

VCE=6V, IC=1mA

fT

150

-

600

MHz

VCE=6V, IC=10mA, f=100MHz

Cob

-

-

4

pF

VCB=10V, f=1MHz, IE=0

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

Classification of hFE2

Rank

Q

P

K

Range

135-270

200-400

300-600

TO-92