Features

• High Surge Capability

DO-8 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

150K(R)20A 150K(R)40A 150K(R)60A

Unit

Repetitive peak reverse voltage

200

400

600

V

DC blocking voltage

200

400

600

V

Continuous forward current

150

150

150

A

2. Reverse polarity (R): Stud is anode.

Silicon Standard

Recovery Diode

150K(R)20A thru 150K(R)100A

150K(R)100A

800

150K(R)80A

150

150

1000

1000

800

Conditions

Continuous forward current

150

150

150

A

t = 8.3ms

58000

58000

58000

A

Operating temperature

-55 to 150

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

-55 to 150

°C

Parameter

Symbol

150K(R)20A 150K(R)40A 150K(R)60A

Unit

Diode forward voltage

1.33

1.33

1.33

Thermal characteristics

Thermal resistance, junction -

case

0.25

0.25

0.25

°C/W

A

3740

Reverse current

3740

35

35

32

24

mA

58000

58000

-55 to 150

35

-55 to 150

C

Conditions

3740

3740

-55 to 150

150

150

-55 to 150

150K(R)100A

150K(R)80A

0.25

0.25

1.33

1.33

V

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Surge non-repetitive forward

current, Half Sine Wave

3740

www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

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