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FQPF4N60C Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQPF4N60C Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  ©2000 Fairchild Semiconductor International (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A, April 2000 Electrical Characteristics T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 71mH, IAS = 2.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD 4.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 µA VDS = 480 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.3 A -- 1.77 2.2 Ω gFS Forward Transconductance VDS = 50 V, ID = 1.3 A -- 3.1 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 520 670 pF Coss Output Capacitance -- 70 90 pF Crss Reverse Transfer Capacitance -- 8 11 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 4.4 A, RG = 25 Ω -- 13 35 ns tr Turn-On Rise Time -- 45 100 ns td(off) Turn-Off Delay Time -- 25 60 ns tf Turn-Off Fall Time -- 35 80 ns Qg Total Gate Charge VDS = 480 V, ID = 4.4 A, VGS = 10 V -- 15 20 nC Qgs Gate-Source Charge -- 3.4 -- nC Qgd Gate-Drain Charge -- 7.1 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2.6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 10.4 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.6 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 4.4 A, dIF / dt = 100 A/µs -- 250 -- ns Qrr Reverse Recovery Charge -- 1.5 -- µC |
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