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FQPF4N60C Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQPF4N60C Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 8 page  ©2000 Fairchild Semiconductor International April 2000 Rev. A, April 2000 QFET QFET QFET QFETTM FQPF4N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. Features • 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V • Low gate charge ( typical 15 nC) • Low Crss ( typical 8.0 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQFP4N60 Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 2.6 A - Continuous (TC = 100°C) 1.64 A IDM Drain Current - Pulsed (Note 1) 10.4 A VGSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 260 mJ IAR Avalanche Current (Note 1) 2.6 A EAR Repetitive Avalanche Energy (Note 1) 3.6 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 36 W - Derate above 25°C 0.29 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 3.47 °C W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C W ! " ! ! ! " " " ! " ! ! ! " " " S D G TO-220F FQPF Series G S D |
Similar Part No. - FQPF4N60C |
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Similar Description - FQPF4N60C |
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