FQPF4N60C datasheet(4/8 Pages) FAIRCHILD

Part #	FQPF4N60C

Description	600V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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4 / 8 page

Rev. A, April 2000

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

N o te s :

1 . Z

JC ( t ) =

3. 47

/W M a x .

2 . D u ty F a c t o r , D = t

1 /t 2

3 . T

JM - T C

= P

DM

* Z

JC (t)

s ing le pu ls e

D= 0 . 5

0. 0 2

0. 2

0. 0 5

0. 1

0. 0 1

t

1 , S q u a r e

W a v e P u ls e D u r a tio n [s e c ]

25

50

75

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T

C, Case Temperature []

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

100 ms

DC

10 ms

1 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

Notes :

1. T

C = 25

o

C

2. T

J = 150

o

C

3. Single Pulse

V

DS, Drain-Source Voltage [V]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :

1. V

GS

= 10 V

2. I

D = 2.2 A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

Notes:

1. V

GS = 0 V

2. I

D = 250

A

T

J, Junction Temperature [

o

C]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

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