FQPF4N60C datasheet(3/8 Pages) FAIRCHILD

Part #	FQPF4N60C

Description	600V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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3 / 8 page

Rev. A, April 2000

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

10

-1

10

0

10

1

25

150

Notes :

1. V

GS = 0V

2. 250

s PulseTest

V

SD , Source-Drain Voltage [V]

2468

10

-1

10

0

10

1

Notes :

1. V

DS = 50V

2. 250

s Pulse Test

-55

150

25

V

GS , Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

Notes :

1. 250

s PulseTest

2. T

C = 25

V

GS

Top :

15 V

10 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom :

5.5 V

V

DS , Drain-Source Voltage [V]

03

69

12

15

0

2

4

6

8

10

12

V

DS = 300V

V

DS = 120V

V

DS = 480V

Note : I

D = 4.4 A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

200

400

600

800

1000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

024

68

10

12

0

1

2

3

4

5

6

V

GS = 20V

V

GS = 10V

Note : T

J = 25

I

D, Drain Current [A]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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FQPF4N60C Datasheet(PDF) 3 Page - Fairchild Semiconductor

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