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FII40-06D Datasheet(PDF) 1 Page - IXYS Corporation

Part # FII40-06D
Description  IGBT phaseleg
PDF  4 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

FII40-06D Datasheet(HTML) 1 Page - IXYS Corporation

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© 2011 IXYS All rights reserved
1 - 4
20110119a
FII 40-06D
IXYS reserves the right to change limits, test conditions and dimensions.
I
C25
= 40 A
V
CES
= 600 V
V
CE(sat) typ. =
1.8 V
IGBT phaseleg
in ISOPLUS i4-PAC™
Features
• NPT IGBT technology
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
• HiPerFRED™ diode
- optimized fast and soft reverse
recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PAC™ package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
• single phaseleg
- buck-boost chopper
• H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
- controlled rectifier
IGBT
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 150°C
600
V
V
GES
± 20
V
I
C25
I
C90
T
C = 25°C
T
C = 90°C
40
25
A
A
I
CM
V
CEK
V
GE = ±15 V; RG = 33 Ω; TVJ = 125°C
RBSOA Clamped inductive load; L = 100 µH
60
V
CES
A
t
SC
(SCSOA)
V
CE = VCES; VGE = ±15 V; RG = 33 Ω
T
VJ = 125°C; non-repetitive
10
µs
P
tot
T
C = 25°C
125
W
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C = 25 A; VGE = 15 V
T
VJ =
25°C
T
VJ = 125°C
1.8
2.0
2.2
V
V
V
GE(th)
I
C = 0.7 mA; VGE = VCE
4.5
6.5
V
I
CES
V
CE = VCES; VGE = 0 V
T
VJ =
25°C
T
VJ = 125°C
0.6
0.6
mA
mA
I
GES
V
CE = 0 V; VGE = ± 20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Inductive load
T
VJ = 125°C
V
CE = 300 V; IC = 25 A
V
GE = ±15 V; RG = 33 Ω
50
50
270
40
1.2
0.8
ns
ns
ns
ns
mJ
mJ
C
ies
V
CE = 25 V; VGE = 0 V; f = 1 MHz
1.6
nF
Q
Gon
V
CE = 300 V; VGE = 15 V; IC = 30 A
95
nC
R
thJC
R
thJH
with heatsink compound
2
1
K/W
K/W
2
3
4
1
E72873
5


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