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4 - 4

20110119a

FII 40-06D

IXYS reserves the right to change limits, test conditions and dimensions.

0

20

40

60

0

2

4

6

8

0

20

40

60

80

0

20

40

60

0,0

0,5

1,0

1,5

2,0

0

100

200

300

400

0,00001 0,0001 0,001

0,01

0,1

1

10

0,0001

0,001

0,01

0,1

1

10

0

10

20

30

40

50

60

70

80

0,0

0,5

1,0

1,5

2,0

0

100

200

300

400

0

10

20

30

40

50

60

70

80

0

1

2

3

4

20

40

60

80

single pulse

V

V

R

T

VDI...50-06P1

V

V

I

C

= 30A

T

0

100

200

300

400

500

600

700

0

20

40

60

80

R

T

V

V

R

T

E

on

t

d(on)

t

r

E

off

t

d(off)

t

f

E

on

t

d(on)

t

r

E

off

t

d(off)

t

f

I

C

A

I

C

A

E

off

E

on

t

t

R

G

R

G

V

CE

t

s

mJ

E

on

mJ

E

off

ns

t

ns

t

I

CM

K/W

IGBT

V

A

mJ

ns

ns

mJ

25T60

25T60

25T60

25T60

25T60

V

V

I

C

= 30 A

T

diode

Fig. 7 Typ. turn on energy and switching

Fig. 8 Typ. turn off energy and switching times versus

collector current times versus collector current

Fig. 9 Typ. turn on energy and switching

Fig. 10 Typ. turn off energy and switching times versus

gate resistor times versus gate resistor

Fig. 11 Reverse biased safe operating area

Fig. 12 Typ. transient thermal impedance RBSOA