5-23

0.5 – 12 GHz Low Noise

Gallium Arsenide FET

Technical Data

Features

• Low Noise Figure:

0.5 dB Typical at 4 GHz

• Low Bias:

• High Associated Gain:

13.0 dB Typical at 4 GHz

• High Output Power:

• Cost Effective Ceramic

Microstrip Package

• Tape-and Reel Packaging

ATF-10136

36 micro-X Package

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

f = 2.0 GHz

dB

0.4

f = 4.0 GHz

dB

0.5

0.6

f = 6.0 GHz

dB

0.8

f = 2.0 GHz

dB

16.5

f = 4.0 GHz

dB

12.0

13.0

f = 6.0 GHz

dB

11.0

Power Output @ 1 dB Gain Compression

f = 4.0 GHz

dBm

20.0

f = 4.0 GHz

dB

12.0

mmho

70

140

mA

70

130

180

V

-4.0

-1.3

-0.5

Note:

1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”

Description

The ATF-10136 is a high performance

gallium arsenide Schottky-barrier-

gate field effect transistor housed in a

cost effective microstrip package. Its

premium noise figure makes this

device appropriate for use in the first

stage of low noise amplifiers operat-

ing in the 0.5-12 GHz frequency range.

This GaAs FET device has a nominal

0.3 micron gate length using airbridge

interconnects between drain fingers.

Total gate periphery is 500 microns.

Proven gold based metallization

systems and nitride passivation

assure a rugged, reliable device.

5965-8701E