STF40N60M2 datasheet(5/22 Pages) STMICROELECTRONICS

Part #	STF40N60M2

Description	N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

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STB40N60M2, STP40N60M2, STW40N60M2

Electrical characteristics

21

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

Source-drain current

-

34

A

I

SDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

-

136

A

V

SD

(2)

2.

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

I

SD

= 34 A, V

GS

= 0

-

1.6

V

t

rr

Reverse recovery time

I

SD

= 34 A, di/dt = 100 A/μs

V

DD

= 60 V (see

Figure 21)

-

440

ns

Q

rr

Reverse recovery charge

-

8.2

μC

I

RRM

Reverse recovery current

-

37

A

t

rr

Reverse recovery time

I

SD

= 34 A, di/dt = 100 A/μs

V

DD

= 60 V, T

j

= 150 °C

(see

Figure 21)

-

568

ns

Q

rr

Reverse recovery charge

-

11.5

μC

I

RRM

Reverse recovery current

-

40.5

A

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