STF40N60M2 datasheet(3/22 Pages) STMICROELECTRONICS

Part #	STF40N60M2

Description	N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STB40N60M2, STP40N60M2, STW40N60M2

Electrical ratings

21

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

GS

Gate-source voltage

± 25

V

I

D

Drain current (continuous) at T

C

= 25 °C

34

A

I

D

Drain current (continuous) at T

C

= 100 °C

22

A

I

DM

(1)

1.

Pulse width limited by safe operating area.

Drain current (pulsed)

136

A

P

TOT

Total dissipation at T

C

= 25 °C

250

W

dv/dt

(2)

2.

I

SD

≤ 34 A, di/dt ≤ 400 A/μs; V

DS peak

< V

(BR)DSS

, V

DD

=400 V.

Peak diode recovery voltage slope

15

V/ns

dv/dt

(3)

3.

V

DS ≤

480 V

MOSFET dv/dt ruggedness

50

V/ns

T

stg

Storage temperature

- 55 to 150

°C

T

j

Max. operating junction temperature

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK

TO-220

TO-247

R

thj-case

Thermal resistance junction-case max

0.50

°C/W

R

thj-pcb

Thermal resistance junction-pcb max

(1)

1.

When mounted on 1 inch² FR-4, 2 Oz copper board

30

°C/W

R

thj-amb

Thermal resistance junction-ambient max

62.5

50

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

I

AR

Avalanche current, repetitive or not

repetitive (pulse width limited by T

jmax

)

6A

E

AS

Single pulse avalanche energy (starting

T

j

=25°C, I

D

= I

AR

; V

DD

=50 V)

500

mJ

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