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HVU359 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HVU359 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 5 page  HVU359 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Reverse voltage V R 15 V Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition Reverse current I R1 — — 10 nA V R = 10V I R2 — — 100 V R = 10V, Ta = 60 °C Capacitance C 1 24.8 — 29.8 pF V R = 1V, f = 1 MHz C 4 6.0 — 8.3 V R = 4V, f = 1 MHz Capacitance ratio n 3.0 — — — C 1/ C4 Series resistance r s — — 1.5 Ω V R = 4V, f = 100 MHz ESD-Capability *1 — 80 — — V C=200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 20nA at VR =10 V |
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