2SK2225 datasheet(4/9 Pages) HITACHI

Part #	2SK2225

Description	Silicon N-Channel MOS FET

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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4 / 9 page

2SK2225

4

50

40

30

20

10

0

Gate to Source Voltage

V

(V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

4

8

12

16

20

2 A

1 A

I

= 3 A

D

0.5 A

Pulse Test

Drain Current

I

(A)

D

Static Drain to Source State Resistance

vs. Drain Current

0.1

50

20

10

2

5

1

0.5

0.2

0.5

1

2

5

10

V

= 10 V

GS

15 V

Pulse Test

20

16

12

8

4

–40

0

40

80

120

160

Case Temperature

Tc

(°C)

0

Static Drain to Source on State Resistance

vs. Temperature

0.5 A, 1 A

I

= 2 A

D

GS

V

= 15 V

Pulse Test

Drain Current I

(A)

D

Forward Transfer Admittance vs.

Drain Current

10

2

5

1

0.2

0.5

0.1

0.05

0.1

0.2

0.5

1

2

5

Tc = –25 °C

25 °C

75 °C

DS

V

= 25 V

Pulse Test

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2SK2225 Datasheet(PDF) 4 Page - Hitachi Semiconductor

2SK2225 Datasheet(HTML) 4 Page - Hitachi Semiconductor

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