2SK2225 datasheet(2/9 Pages) HITACHI

Part #	2SK2225

Description	Silicon N-Channel MOS FET

Download	9 Pages

Scroll/Zoom	100%

Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

Logo

2 / 9 page

2SK2225

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DSS

1500

V

Gate to source voltage

V

GSS

±20

V

Drain current

I

D

2A

Drain peak current

I

D(pulse)*

1

7A

Body to drain diode reverse drain current

I

DR

2A

Channel dissipation

Pch*

2

50

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes

1. PW

≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage

V

(BR)DSS

1500

—

V

I

D = 10 mA, VGS = 0

Gate to source leak current

I

GSS

——

±1

µAV

GS = ±20 V, VDS = 0

Zero gate voltage drain current I

DSS

—

500

µAV

DS =1200 V, VGS = 0

Gate to source cutoff voltage

V

GS(off)

2.0

—

4.0

V

I

D = 1 mA, VDS = 10 V

Static drain to source on state

resistance

R

DS(on)

—9

12

Ω

I

D = 1 A

V

GS = 15 V*

1

Forward transfer admittance

|y

fs|

0.45

0.75

—

S

I

D = 1 A

V

DS = 20 V*

1

Input capacitance

Ciss

—

990

—

pF

V

DS = 10 V

Output capacitance

Coss

—

125

—

pF

V

GS = 0

Reverse transfer capacitance

Crss

—

60

—

pF

f = 1 MHz

Turn-on delay time

t

d(on)

—

17

—

ns

I

D = 1 A

Rise time

t

r

—

50

—

ns

V

GS = 10 V

Turn-off delay time

t

d(off)

—

150

—

ns

R

L = 30 Ω

Fall time

t

f

—50—ns

Body to drain diode forward

voltage

V

DF

—

0.9

—

V

I

F = 2 A, VGS = 0

Body to drain diode reverse

recovery time

t

rr

—

1750

—

ns

I

F = 20 A, VGS = 0,

di

F / dt = 100 A / µs

Note

1. Pulse Test

Similar Part No. - 2SK2225

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	2SK2225	81Kb / 7P	Silicon N Channel MOS FET
Inchange Semiconductor ...	2SK2225	315Kb / 2P	isc N-Channel MOSFET Transistor
Renesas Technology Corp	2SK2225	260Kb / 7P	1500V - 2A - MOS FET High Speed Power Switching
	2SK2225-80-E	190Kb / 7P	High Speed Power Switching
	2SK2225-80-E	359Kb / 7P	1500V - 2A - MOS FET

More results

Similar Description - 2SK2225

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	HAT2088R	110Kb / 9P	Silicon N Channel MOS FET Silicon N Channel MOS FET
	H5N2802PF	123Kb / 9P	Silicon N Channel MOS FET Silicon N Channel MOS FET
	HAT2093R	79Kb / 6P	Silicon N Channel Power MOS FET Silicon N Channel Power MOS FET
Hitachi Semiconductor	2SK1157	49Kb / 9P	Silicon N-Channel MOS FET
	2SK1301	48Kb / 9P	Silicon N-Channel MOS FET
	2SK1328	33Kb / 6P	Silicon N-Channel MOS FET
	2SK1526	50Kb / 9P	Silicon N-Channel MOS FET
	2SK619	35Kb / 1P	SILICON N-CHANNEL MOS FET
	2SK1093	20Kb / 3P	Silicon N-Channel MOS FET
Panasonic Semiconductor	2SK1228	35Kb / 2P	Silicon N-Channel MOS FET
Panasonic Semiconductor	2SK615	35Kb / 2P	Silicon N-Channel MOS FET

More results

2SK2225 Datasheet(PDF) 2 Page - Hitachi Semiconductor

2SK2225 Datasheet(HTML) 2 Page - Hitachi Semiconductor

Similar Part No. - 2SK2225

Similar Description - 2SK2225

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL