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2SK2225 Datasheet(PDF) 5 Page - Hitachi Semiconductor |
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2SK2225 Datasheet(HTML) 5 Page - Hitachi Semiconductor |
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5 / 9 page  2SK2225 5 Reverse Drain Current I (A) DR Body to Drain Diode Reverse Recovery Time 5000 2000 1000 200 500 100 50 0.05 0.1 0.2 0.5 1 2 5 di / dt = 100 A / µs, Ta = 25 °C V = 0, Pulse Test GS 10000 1000 100 10 0 Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss V = 0 f = 1 MHz GS 10 20 30 40 50 1000 800 600 400 200 0 Gate Charge Qg (nc) 20 16 12 8 4 0 Dynamic Input Characteristics 20 40 60 80 100 V = 250 V 400 V 600 V DD V = 250 V 400 V 600 V DD I = 2.5 A D VGS DS V Drain Current I (A) D Switching Characteristics 1000 200 500 100 20 10 50 0.05 0.1 0.2 0.5 1 2 5 t f r t d(on) t d(off) t V = 10 V PW = 2 µs duty < 1 % GS |
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