2SK1058 datasheet(3/8 Pages) HITACHI

Part #	2SK1058

Description	Silicon N-Channel MOS FET

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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2SK1056, 2SK1057, 2SK1058

3

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source

2SK1056

V

(BR)DSX

120

—

V

I

D = 10 mA, VGS = –10 V

breakdown voltage

2SK1057

140

2SK1058

160

Gate to source breakdown

voltage

V

(BR)GSS

±15

——V

I

G = ±100 µA, VDS = 0

Gate to source cutoff voltage

V

GS(off)

0.15

—

1.45

V

I

D = 100 mA, VDS = 10 V

Drain to source saturation

voltage

V

DS(sat)

——12

V

I

D = 7 A, VGD = 0 *

1

Forward transfer admittance

|yfs|

0.7

1.0

1.4

S

I

D = 3 A, VDS = 10 V *

1

Input capacitance

Ciss

—

600

—

pF

V

GS = –5 V, VDS = 10 V,

Output capacitance

Coss

—

350

—

pF

f = 1 MHz

Reverse transfer capacitance

Crss

—

10

—

pF

Turn-on time

t

on

—

180

—

ns

V

DD = 20 V, ID = 4 A,

Turn-off time

t

off

—60

—

ns

Note:

1. Pulse test

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2SK1058 Datasheet(PDF) 3 Page - Hitachi Semiconductor

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