2SJ162 datasheet(3/8 Pages) HITACHI

Part #	2SJ162

Description	Silicon P-Channel MOS FET

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Manufacturer	HITACHI [Hitachi Semiconductor]

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3 / 8 page

2SJ160, 2SJ161, 2SJ162

3

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source

2SJ160

V

(BR)DSX

–120

—

V

I

D = –10 mA , VGS = 10 V

breakdown voltage

2SJ161

–140

—

V

2SJ162

–160

—

V

Gate to source breakdown

voltage

V

(BR)GSS

±15

——V

I

G = ±100 µA, VDS = 0

Gate to source cutoff voltage

V

GS(off)

–0.15

—

–1.45

V

I

D = –100 mA, VDS = –10 V

Drain to source saturation

voltage

V

DS(sat)

—

–12

V

I

D = –7 A, VGD = 0*

1

Forward transfer admittance

|y

fs|

0.7

1.0

1.4

S

I

D = –3 A, VDS = –10 V*

1

Input capacitance

Ciss

—

900

—

pF

V

GS = 5 V, VDS = –10V,

Output capacitance

Coss

—

400

—

pF

f = 1 MHz

Reverse transfer capacitance

Crss

—

40

—

pF

Turn-on time

t

on

—

230

—

ns

V

DD = –20 V, ID = –4 A

Turn-off time

t

off

—

110

—

ns

Note:

1. Pulse test

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