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2SJ161 Datasheet(PDF) 4 Page - Hitachi Semiconductor

Part # 2SJ161
Description  Silicon P-Channel MOS FET
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ161 Datasheet(HTML) 4 Page - Hitachi Semiconductor

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2SJ160, 2SJ161, 2SJ162
4
150
100
50
0
50
100
150
Case Temperature TC (°C)
Power vs. Temperature Derating
–20
–5
–1.0
–0.2
–20
–100
–500
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
–10
–0.5
–5
–10
–50
–200
Ta = 25°C
PW
=
100
ms
(1
Shot)
ID max (Continuous)
(–14.3 V,
–7 A)
(–140 V, –0.71 A)
(–160 V, –0.63 A)
2SJ160
2SJ161
2SJ162
(–120 V, –0.83 A)
–2
–10
–20
–50
Drain to Source Voltage VDS (V)
Typical Output Characteristics
–8
–2
–10
–30
–40
TC = 25°C
0
–4
–6
–2
V
GS = 0
–1 V
–3
–4
–5
–6
–7
–8
Pch
= 100
W
–1.0
–0.8
–2.0
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
–0.8
–0.2
–0.4
–1.2
–1.6
0
–0.4
–0.6
VDS = –10 V


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