2SD756 datasheet(2/6 Pages) HITACHI

Part #	2SD756

Description	Silicon NPN Epitaxial

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Manufacturer	HITACHI [Hitachi Semiconductor]

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2SD755, 2SD756, 2SD756A

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

2SD755

2SD756

2SD756A

Unit

Collector to base voltage

V

CBO

100

120

140

V

Collector to emitter voltage

V

CEO

100

120

140

V

Emitter to base voltage

V

EBO

55

5V

Collector current

I

C

50

mA

Collector power dissipation

P

C

750

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

2SD755

2SD756

2SD756A

Item

Symbol Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to emitter

breakdown voltage

V

(BR)CEO

100

—

120

—

140

—

V

I

C = 1 mA,

R

BE = ∞

Collector to base

breakdown voltage

V

(BR)CBO

100

—

120

—

140

—

V

I

C = 10 µA, IE = 0

Collector cutoff current

I

CBO

—

0.5

—

0.5

—

0.5

µAV

CB = 100 V, IE = 0

DC current transfer ratio h

FE1*

1

250

—

1200 250

—

800

250

—

500

V

CE = 12 V,

I

C = 2 mA

h

FE2

125

—

125

—

125

—

V

CE = 12 V,

I

C = 10 mA

Base to emitter voltage

V

BE

—

0.75

—

0.75

—

0.75

V

CE = 12 V,

I

C = 2 mA

Collector to emitter

saturation voltage

V

CE(sat)

—

0.2

—

0.2

—

0.2

V

I

C = 10 mA,

I

B = 1 mA

Gain bandwidth product f

T

—

350

—

350

—

350

—

MHz V

CE = 12 V,

I

C = 5 mA

Collector output

capacitance

Cob

—

1.6

—

1.6

—

1.6

—

pF

V

CB = 25 V, IE = 0,

f = 1 MHz

Note:

1. The 2SD755, 2SD756 and 2SD756A are grouped by h

FE1 as follows.

DE

F

2SD755

250 to 500

400 to 800

600 to 1200

2SD756

250 to 500

400 to 800

—

2SD756A

250 to 500

—

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