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SI8660BA-B-IS1 Datasheet(PDF) 21 Page - Silicon Laboratories |
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SI8660BA-B-IS1 Datasheet(HTML) 21 Page - Silicon Laboratories |
21 / 40 page Rev. 1.5 21 Si8660/61/62/63 Table 11. Absolute Maximum Ratings1 Parameter Symbol Min Typ Max Unit Storage Temperature2 TSTG –65 — 150 °C Ambient Temperature Under Bias TA –40 — 125 °C Junction Temperature TJ —— 150 °C Supply Voltage VDD1, VDD2 –0.5 — 7.0 V Input Voltage VI –0.5 — VDD + 0.5 V Output Voltage VO –0.5 — VDD + 0.5 V Output Current Drive Channel IO —— 10 mA Lead Solder Temperature (10 s) — — 260 °C Maximum Isolation (Input to Output) (1 sec) NB SOIC-16 — — 4500 VRMS Maximum Isolation (Input to Output) (1 sec) WB SOIC-16 — — 6500 VRMS Notes: 1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to conditions as specified in the operational sections of this data sheet. 2. VDE certifies storage temperature from –40 to 150 °C. |
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