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SI8660BA-B-IS1 Datasheet(PDF) 19 Page - Silicon Laboratories |
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SI8660BA-B-IS1 Datasheet(HTML) 19 Page - Silicon Laboratories |
19 / 40 page Rev. 1.5 19 Si8660/61/62/63 Table 7. IEC 60664-1 (VDE 0844 Part 2) Ratings Parameter Test Conditions Specification NB SOIC-16 WB SOIC-16 Basic Isolation Group Material Group I I Installation Classification Rated Mains Voltages < 150 VRMS I-IV I-IV Rated Mains Voltages < 300 VRMS I-III I-IV Rated Mains Voltages < 400 VRMS I-II I-III Rated Mains Voltages < 600 VRMS I-II I-III Table 8. IEC 60747-5-2 Insulation Characteristics for Si86xxxx* Parameter Symbol Test Condition Characteristic Unit WB SOIC-16 NB SOIC-16 Maximum Working Insulation Voltage VIORM 1200 630 Vpeak Input to Output Test Voltage VPR Method b1 (VIORM x1.875 =VPR, 100% Production Test, tm = 1 sec, Partial Discharge < 5 pC) 2250 1182 Transient Overvoltage VIOTM t = 60 sec 6000 6000 Vpeak Pollution Degree (DIN VDE 0110, Table 1) 22 Insulation Resistance at TS, VIO =500 V RS >109 >109 *Note: Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of 40/125/21. Table 9. IEC Safety Limiting Values1 Parameter Symbol Test Condition Max Unit WB SOIC-16 NB SOIC-16 Case Temperature TS 150 150 °C Safety Input, Output, or Supply Current IS JA =105 °C/W (NB SOIC-16), VI = 5.5 V, TJ =150 °C, TA =25°C 220 215 mA Device Power Dissipation2 PD 415 415 mW Notes: 1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 3 and 4. 2. The Si86xx is tested with VDD1 = VDD2 = 5.5 V, TJ = 150 ºC, CL = 15 pF, input a 150 Mbps 50% duty cycle square wave. |
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