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2SB647 Datasheet(PDF) 4 Page - Hitachi Semiconductor

Part # 2SB647
Description  Silicon PNP Epitaxial
Download  6 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SB647 Datasheet(HTML) 4 Page - Hitachi Semiconductor

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2SB647, 2SB647A
4
Saturation Voltage
vs. Collector Current
Collector Current IC (mA)
IC = 10 IB
Pulse
Ta = –25
°C
75
25
25
–25
Ta = 75
°C
VCE(sat)
VBE(sat)
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
0
–1
–3
–10
–30
–100 –300 –1,000
Gain Bandwidth Product
vs. Collector Current
VCE = –5 V
240
200
160
120
80
40
0
–10
–30
–100
–300
–1,000
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
–1
200
100
50
20
10
5
2
–2
–5
–10
Collector to Base Voltage VCB (V)
–50
–20
–100
f = 1 MHz
IE = 0


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