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2SB647 Datasheet(PDF) 3 Page - Hitachi Semiconductor

Part # 2SB647
Description  Silicon PNP Epitaxial
Download  6 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SB647 Datasheet(HTML) 3 Page - Hitachi Semiconductor

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2SB647, 2SB647A
3
Maximum Collector Dissipation
Curve
1.2
0.8
0.4
0
50
150
100
Ambient Tmperature Ta (
°C)
Typical Output Characteristics
–1.0
–0.8
–0.6
–0.4
–0.2
0
–2
–10
–6
–4
–8
IB = 0
–0.5mA
–2
–1
–5
–10
–20
–30
–40
–60
–80
–100
–120
Collector to Emitter Voltage VCE (V)
P
C
= 0.9
W
Typical Transfer Characteristics
–500
–200
–100
–50
–20
–10
–5
–2
–1
0
–0.2
–0.4
–0.6
–0.8
–1.0
VCE = –5 V
Pulse
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio
vs. Collector Current
VCE = –5 V
Pulse
Ta = 75°C
600
500
400
300
200
100
0
–1
–3
–30
–300
–10
Collector Current IC (mA)
–100
–1,000
25
–25


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