2SB647 datasheet(2/6 Pages) HITACHI

Part #	2SB647

Description	Silicon PNP Epitaxial

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Manufacturer	HITACHI [Hitachi Semiconductor]

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2SB647, 2SB647A

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

2SB647

2SB647A

Unit

Collector to base voltage

V

CBO

–120

V

Collector to emitter voltage

V

CEO

–80

–100

V

Emitter to base voltage

V

EBO

–5

V

Collector current

I

C

–1

A

Collector peak current

i

C(peak)

–2

A

Collector power dissipation

P

C

0.9

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

2SB647

2SB647A

Item

Symbol Min

Typ

Max

Min

Typ

Max Unit

Test conditions

Collector to base

breakdown voltage

V

(BR)CBO

–120 —

—

–120 —

—

V

I

C = –10 µA, IE = 0

Collector to emitter

breakdown voltage

V

(BR)CEO

–80

—

–100 —

—

V

I

C = –1 mA, RBE = ∞

Emitter to base breakdown

voltage

V

(BR)EBO

–5

—

–5

—

V

I

E = –10 µA, IC = 0

Collector cutoff current

I

CBO

—

–10

—

–10

µAV

CB = –100 V, IE = 0

DC current transfer ratio

h

FE1*

1

60

—

320

60

—

200

V

CE = –5 V,

I

C = –150 mA*

2

h

FE2

30

—

30

—

V

CE = –5 V,

I

C = –500 mA*

2

Collector to emitter

saturation voltage

V

CE(sat)

—

–1

—

–1

V

I

C = –500 mA,

I

B = –50 mA*

2

Base to emitter voltage

V

BE

—

–1.5

—

–1.5 V

V

CE = –5 V,

I

C = –150 mA*

2

Gain bandwidth product

f

T

—

140

—

140

—

MHz V

CE = –5 V, IC = –150 mA

Collector output capacitance Cob

—

20

—

20

—

pF

V

CB = –10 V, IE = 0

f = 1 MHz

Notes: 1. The 2SB647 and 2SB647A are grouped by h

FE1 as follows.

2. Pulse test

BC

D

2SB647

60 to 120

100 to 200

160 to 320

2SB647A

60 to 120

100 to 200

—

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