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GTT8209E Datasheet(PDF) 2 Page - E-Tech Electronics LTD |
GTT8209E Datasheet(HTML) 2 Page - E-Tech Electronics LTD |
2 / 4 page ![]() GTT8209E Page: 2/4 ISSUED DATE :2006/08/08 REVISED DATE : Electrical Characteristics (Tj = 25 :::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.5 - 1.0 V VDS=VGS, ID=250uA Forward Transconductance gfs - 24 - S VDS=5V, ID=7A Gate-Source Leakage Current IGSS - - ±10 uA VGS= ±10V Drain-Source Leakage Current(Tj=25 : ) - - 1 uA VDS=16V, VGS=0 Drain-Source Leakage Current(Tj=55 : ) IDSS - - 5 uA VDS=16V, VGS=0 - - 21 VGS=10V, ID=7.0A - - 24 VGS=4.5V, ID=6.6A - - 32 VGS=2.5V, ID=5.5A Static Drain-Source On-Resistance RDS(ON) - - 50 m VGS=1.8V, ID=2.0A Total Gate Charge2 Qg - 9.3 - Gate-Source Charge Qgs - 0.6 - Gate-Drain (“Miller”) Change Qgd - 3.6 - nC ID=7A VDS=10V VGS=4.5V Turn-on Delay Time2 Td(on) - 5.7 - Rise Time Tr - 11.5 - Turn-off Delay Time Td(off) - 31.5 - Fall Time Tf - 9.7 - ns VDS=10V VGS=5V RG=3 RL=1.4 Input Capacitance Ciss - 630 Output Capacitance Coss - 164 - Reverse Transfer Capacitance Crss - 137 - pF VGS=0V VDS=10V f=1.0MHz Gate Resistance Rg - 1.5 - f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.0 V IS=1.0A, VGS=0V Reverse Recovery Time2 Trr - 15.2 - ns Reverse Recovery Charge Qrr - 6.3 - nC IS=7A, VGS=0V dI/dt=100A/ s Continuous Source Current (Body Diode) IS - - 2.5 A VD=VG=0V, VS=1.0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board t 5sec; 180 : /W when mounted on Min. copper pad. |
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