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G2310 Datasheet(PDF) 2 Page - E-Tech Electronics LTD |
G2310 Datasheet(HTML) 2 Page - E-Tech Electronics LTD |
2 / 4 page ![]() 2/4 ISSUED DATE :2005/01/17 REVISED DATE :2005/03/22B Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 60 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.05 - V/ : Reference to 25 : , ID=1mA Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA Forward Transconductance gfs - 5.0 - S VDS=5V, ID=3A Gate-Source Leakage Current IGSS - - D100 nA VGS= D20V Drain-Source Leakage Current(Tj=25 : ) - - 10 uA VDS=60V, VGS=0 Drain-Source Leakage Current(Tj=70 : ) IDSS - - 25 uA VDS=48V, VGS=0 - - 90 VGS=10V, ID=3A Static Drain-Source On-Resistance RDS(ON) - - 120 m Ł VGS=4.5V, ID=2A Total Gate Charge2 Qg - 6 10 Gate-Source Charge Qgs - 1.6 - Gate-Drain (“Miller”) Change Qgd - 3 - nC ID=3A VDS=48V VGS=4.5V Turn-on Delay Time2 Td(on) - 6 - Rise Time Tr - 5 - Turn-off Delay Time Td(off) - 16 - Fall Time Tf - 3 - ns VDS=30V ID=1A VGS=10V RG=3.3 Ł RD=30 Ł Input Capacitance Ciss - 490 780 Output Capacitance Coss - 55 - Reverse Transfer Capacitance Crss - 40 - pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.2 V IS=1.2A, VGS=0V Reverse Recovery Time Trr - 25 - ns Reverse Recovery Charge Qrr - 26 - nC IS=3A, VGS=0V dI/dt=100A/ s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board;270 : /W when mounted on min. copper pad. |
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