2SK30 datasheet(1/8 Pages) NEC

Part #	2SK30

Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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©

1998, 1999

MOS FIELD EFFECT TRANSISTOR

2SK3058

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DATA SHEET

Document No.

D13097EJ1V0DS00 (1st edition)

Date Published

April 1999 NS CP(K)

Printed in Japan

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES

• Super Low On-State Resistance

RDS(on)1 = 17 m

Ω MAX. (VGS = 10 V, ID = 28 A)

RDS(on)2 = 27 m

Ω MAX. (VGS = 4.0 V, ID = 28 A)

• Low Ciss : Ciss = 2100 pF (TYP.)

• Built-in Gate Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage (VGS = 0)

VDSS

60

V

Gate to Source Voltage (VDS = 0)

VGSS(AC)

±20

V

Gate to Source Voltage (VDS = 0)

VGSS(DC)

+20, –10

V

Drain Current (DC)

ID(DC)

±55

A

Drain Current (Pulse)

Note1

ID(pulse)

±165

A

Total Power Dissipation (TC = 25°C)

PT

58

W

Total Power Dissipation (TA = 25°C)

PT

1.5

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to + 150

°C

Single Avalanche Current

Note2

IAS

27.5

A

Single Avalanche Energy

Note2

EAS

75.6

mJ

Notes 1. PW

≤ 10

µs, Duty cycle ≤ 1 %

2. Starting Tch = 25 °C, RG = 25

Ω, VGS = 20 V

→ 0

THERMAL RESISTANCE

Channel to Case

Rth(ch-C)

2.16

°C/W

Channel to Ambient

Rth(ch-A)

83.3

°C/W

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3058

TO-220AB

2SK3058-S

TO-262

2SK3058-ZJ

TO-263

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