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M29W160ET70N3E Datasheet(PDF) 1 Page - Numonyx B.V |
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M29W160ET70N3E Datasheet(HTML) 1 Page - Numonyx B.V |
1 / 42 page ![]() 1/42 April 2011 M29W160ET M29W160EB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE –VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 3 Parameter and 31 Main Blocks PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE – 64 bit Security Code LOW POWER CONSUMPTION – Standby and Automatic Standby 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W160ET: 22C4h – Bottom Device Code M29W160EB: 2249h Automotive Grade Parts Available Figure 1. Packages BGA TSOP48 (N) 12 x 20mm TFBGA48 (ZA) 6 x 8mm FBGA FBGA64 (ZS) 11 x 13 mm |
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