©

1994

DATA SHEET

The information in this document is subject to change without notice.

MOS Field Effect Power Transistors

2SK2723

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor

designed for high current switching spplications.

FEATURES

• Low On-Resistance

• Built-in G-S Protection Diode

• Isolated TO-220 Package

°C)

Drain to Source Voltage

60

V

Gate to Source Voltage

±20

V

Drain Current (DC)

±25

A

Drain Current (pulse)*

±100

A

°C)

2.0

W

°C)

25

W

Channel Temperature

150

°C

Storage Temperature

−55 to +150

°C

*PW

≤ 10

µs, Duty Cycle ≤ 1%

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

deveice acutally used, an addtional protection circiut is externally required if voltage exceeding the rated voltage

may be applied to this device.

Drain

Source

Body

Diode

Gate

Gate Protection

Diode

10.0

± 0.3

PACKAGE DIMENSIONS

(in millimeter)

MP-45F (ISOLATED TO-220)

4.5

± 0.2

2.7

± 0.2

2.5

± 0.1

1.3

± 0.2

0.7

± 0.1

1.5

± 0.2

2.54

1.Gate

2.Drain

3.Source

2.54

12

3

0.65

± 0.1

3.2

± 0.2

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

Document No. D10623EJ2V0DS00 (2nd edition)

Date Published April 1996 P

Printed in Japan