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F00002 Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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F00002 Datasheet(HTML) 2 Page - Solid States Devices, Inc |
2 / 2 page SOLID STATE DEVICES, INC. V 40 - V(BR)DSS Drain - Source Breakdown Voltage (VGS = 0V, ID = 250µA) nA - E 100 Gate - Emitter Leakage Current (VDS = 0V, VGS = +20V) µµµµµA - - 1 50 IDSS Zero Gate Voltage Drain Current (VDS = 40V, VGS = 0V) 70 - ID(on) On-State Drain Current * (VDS = 5V, VGS = 10V) S 20 - gfs MIN MAX ELECTRICAL CHARACTERISTICS 4/ SYMBOL UNITS -pF Output Capacitance - Coss VDD = 15V, ID = 70A, VGEN = 10V, RL = 0.2Ω, RG = 2.5Ω Turn-On Delay Time td(on) 30 nsec IGSS - NOTES: * Pulse Test: Pulse Width = 300us, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability, Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ All Electrical Characteristics @25oC, Unless Otherwise Specified. 5/ Current Limited by Package, Die Rated at 70A SFF70N04 SERIES Reverse Transfer Capacitance - Crss Turn-Off Delay Time Rise Time tr 30 nsec td(off) 100 nsec - - V 13 Gate Threshold Voltage (VDS = VGS, IDS = 250µA) VGS (th) 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Available Part Numbers: SFF70N04S.5 A Forward Transconductance * (VDS = 15V, ID = 30A) -pF Fall Time tf 60 nsec - - - - - - 57 TYP 600 14 160 12 58 - 30 TJ = 25 oC TJ = 125 oC Reverse Diode Forward Voltage Drop (IF = 70A, VGS = 0V) - VF 1.5 V 1.0 Reverse Diode Reverse Recovery Time (IF = 70A, di/dt = 100A/µs) - tRR 100 nsec 50 - - - - 0.010 0.017 0.014 0.024 RDS(on) Drain-Source On-State Resistance * VGS = 10V, ID = 30A VGS = 4.5V, ID = 20A Ω Ω Ω Ω Ω 0.008 0.014 0.011 0.019 TJ = 25 oC TJ = 125 oC TJ = 25 oC TJ = 125 oC -pF Input Capacitance - Ciss 2700 VDS = 25V, VGS = 0V, f = 1MHz -nC Gate - Source Charge - Qgs Gate - Drain Charge - Qgd -nC 10 9 100 nC Total Gate Charge - Qg 50 VDS = 15V, VGS = 10V, ID = 70A PIN ASSIGNMENT Source Gate Drain PACKAGE Pin 3 Pin 2 Pin1 SMD.5 |
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