2SK2485

2

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

TEST CONDITIONS

Drain to Source On-Resistance

2.2

2.8

Gate to Source Cutoff Voltage

2.5

3.5

Forward Transfer Admittance

2.0

Drain Leakage Current

100

Gate to Source Leakage Current

±100

Input Capacitance

1200

Output Capacitance

170

Reverse Transfer Capacitance

30

f = 1 MHz

Turn-On Delay Time

20

Rise Time

10

Turn-Off Delay Time

70

Fall Time

15

Ω R

Ω

Total Gate Charge

40

Gate to Source Charge

7

Gate to Drain Charge

17

Body Diode Forward Voltage

1.0

Reverse Recovery Time

740

Reverse Recovery Charge

4.0

di/dt = 50 A/

µs

UNIT

Ω

V

S

µA

nA

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

µC

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

Test Circuit 3 Gate Charge

PG

Ω

50

Ω

D.U.T.

L

Test Circuit 1 Avalanche Capability

PG.

Ω

D.U.T.

Test Circuit 2 Switching Time

PG.

50

Ω

D.U.T.

0

t = 1 us

Duty Cycle

≤ 1 %

Wave Form

Wave Form

10 %

10 %

0

0

90 %

90 %

90 %

10 %

t