MOS FIELD EFFECT TRANSISTOR

DESCRIPTION

The 2SK2485 is N-Channel MOS Field Effect Transistor designed

for high voltage switching applications.

FEATURES

Drain to Source Voltage

900

V

Gate to Source Voltage

±30

V

Drain Current (DC)

±6.0

A

Drain Current (pulse)*

±12

A

100

W

3.0

W

Channel Temperature

150

˚C

Storage Temperature

–55 to +150 ˚C

Single Avalanche Current**

6.0

A

Single Avalanche Energy**

42.3

mJ

*

PW

≤ 10

µs, Duty Cycle ≤ 1 %

2SK2485

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

Document No. D10279EJ1V0DS00 (1st edition)

Date Published August 1995 P

Printed in Japan

PACKAGE DIMENSIONS

(in millimeter)

1.0±0.2

123

1. Gate

2. Drain

3. Source

4. Fin (Drain)

MP-88

4

15.7 MAX.

3.2±0.2

2.8±0.1

0.6±0.1

2.2±0.2

5.45

5.45

4.7 MAX.

1.5

Body

Diode

Source

Drain

Gate

©

1995

DATA SHEET