2SK2476

2

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

TEST CONDITIONS

Drain to Source On-Resistance

3.4

5.0

Gate to Source Cutoff Voltage

2.5

3.5

Forward Transfer Admittance

1.0

Drain Leakage Current

100

Gate to Source Leakage Current

±100

Input Capacitance

590

Output Capacitance

100

Reverse Transfer Capacitance

20

f = 1 MHz

Turn-On Delay Time

15

Rise Time

5

Turn-Off Delay Time

45

Fall Time

7

Ω

Total Gate Charge

20

Gate to Source Charge

5

Gate to Drain Charge

10

Body Diode Forward Voltage

1.0

Reverse Recovery Time

510

Reverse Recovery Charge

2.2

di/dt = 50 A/

µs

UNIT

Ω

V

S

µA

nA

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

µC

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

Test Circuit 3 Gate Charge

PG

Ω

50

Ω

D.U.T.

L

Test Circuit 1 Avalanche Capability

PG.

Ω

D.U.T.

Test Circuit 2 Switching Time

PG.

50

Ω

D.U.T.

0

t = 1us

Duty Cycle

≤ 1 %

Wave Form

Wave Form

10 %

10 %

0

0

90 %

90 %

90 %

10 %

t