MOS FIELD EFFECT TRANSISTOR

DESCRIPTION

The 2SK2476 is N-Channel MOS Field Effect Transistor designed

for high voltage switching applications.

FEATURES

Drain to Source Voltage

800

V

Gate to Source Voltage

±30

V

Drain Current (DC)

±3.0

A

Drain Current (pulse)*

±9.0

A

40

W

2.0

W

Channel Temperature

150

˚C

Storage Temperature

–55 to +150 ˚C

Single Avalanche Current**

3.0

A

Single Avalanche Energy**

37.8

mJ

*

PW

≤ 10

µs, Duty Cycle ≤ 1 %

2SK2476

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

Document No. D10268EJ1V0DS00 (1st edition)

Date Published August 1995 P

Printed in Japan

PACKAGE DIMENSIONS

(in millimeter)

10.0±0.3

4.5±0.2

3.2±0.2

2.7±0.2

2.5±0.1

1.3±0.2

1.5±0.2

2.54

0.7±0.1

2.54

0.65±0.1

123

1. Gate

2. Drain

3. Source

MP-45F (ISOLATED TO-220)

Body

Diode

Source

Drain

Gate

©

1995

DATA SHEET