2SK2415, 2SK2415-Z

2

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

TEST CONDITIONS

Drain to Source On-State Resistance

0.07

0.10

Drain to Source On-State Resistance

0.10

0.15

Gate to Source Cutoff Voltage

1.0

1.6

2.0

Forward Transfer Admittance

5.0

8.4

Drain Leakage Current

10

Gate to Source Leakage Current

±10

Input Capacitance

570

Output Capacitance

290

Reverse Transfer Capacitance

75

f = 1 MHz

Turn-On Delay Time

Rise Time

60

Turn-Off Delay Time

75

Fall Time

40

Ω

Total Gate Charge

21

Gate to Source Charge

2.0

Gate to Drain Charge

6.5

Body Diode Forward Voltage

1.0

Reverse Recovery Time

85

Reverse Recovery Charge

200

di/dt = 100 A/

µs

Test Circuit 1 Avalanche Capability

Test Circuit 2 Switching Time

UNIT

Ω

Ω

V

S

µA

µA

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

Ω

50

Ω

D.U.T.

PG

L

→ 0 V

D.U.T.

PG.

0

t

t = 1 s

Duty Cycle 1 %

Wave

Form

Wave

Form

0

0

10 %

10 %

90 %

90 %

10 %

90 %

Ω

µ

D.U.T.

50

Ω

PG.

Test Circuit 3 Gate Charge