©

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION

The 2SK2415 is N-Channel MOS Field Effect Transistor designed

for high voltage switching applications.

FEATURES

QUALITY GRADE

Standard

Please refer to "Quality grade on NEC Semiconductor Devices" (Document

number IEI-1209) published by NEC Corporation to know the

specification of quality grade on the devices and its recommended applica-

tions.

Drain to Source Voltage

60

V

Gate to Source Voltage

±20

V

Drain Current (DC)

±8.0

A

Drain Current (pulse)*

±32

A

20

W

1.0

W

Channel Temperature

150

°C

Storage Temperature

–55 to +150

°C

Single Avalanche Current**

8.0

A

Single Avalanche Energy**

6.4

mJ

*

PW

≤ 10

µs, Duty Cycle ≤ 1 %

Document No. D13207EJ1V1DS00 (1st edition)

(Previous No. TC-2496)

Date Published December 1997 N CP(K)

Printed in Japan

2SK2415, 2SK2415-Z

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

PACKAGE DIMENSIONS

(in millimeters)

The information in this document is subject to change without notice.

1994

1. Gate

2. Drain

3. Source

4. Fin (Drain)

6.5 ± 0.2

TO-251 (MP-3)

5.0 ± 0.2

2.3 ± 0.2

0.5 ± 0.1

0.6 ± 0.1

0.6 ± 0.1

13

2.3 2.3

4

2

6.5 ± 0.2

5.0 ± 0.2

2.3 ± 0.2

0.5 ± 0.1

2.3 2.3

1 2

3

4

0.9

MAX.

0.8

MAX.

0.8

1. Gate

2. Drain

3. Source

4. Fin (Drain)

Drain

Gate

Source

Body

Diode

Gate Protection

Diode

TO-252 (MP-3Z)