2SK2410

2

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

TEST CONDITIONS

Drain to Source On-Resistance

31

40

Drain to Source On-Resistance

40

60

Gate to Source Cutoff Voltage

1.0

1.5

2.0

Forward Transfer Admittance

15

27

Drain Leakage Current

10

Gate to Source Leakage Current

±10

Input Capacitance

1500

Output Capacitance

720

Reverse Transfer Capacitance

190

f = 1 MHz

Turn-On Delay Time

22

Rise Time

260

Turn-Off Delay Time

130

Fall Time

150

Ω

Total Gate Charge

50

Gate to Source Charge

5.0

Gate to Drain Charge

15

Body Diode Forward Voltage

1.1

Reverse Recovery Time

110

Reverse Recovery Charge

320

di/dt = 100 A/

µs

Test Circuit 1 Avalanche Capability

Test Circuit 2 Switching Time

Ω

50

Ω

PG

L

→ 0 V

Ω

D.U.T.

PG.

0

t

t = 1 s

Duty Cycle

≤ 1 %

0

0

10 %

10 %

90 %

90 %

10 %

90 %

Test Circuit 3 Gate Charge

D.U.T.

50

Ω

PG.

D.U.T.

Wave

Form

Wave

Form

µ

UNIT

m

Ω

m

Ω

V

S

µA

µA

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.