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2SK2410 Datasheet(PDF) 1 Page - NEC |
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2SK2410 Datasheet(HTML) 1 Page - NEC |
1 / 8 page ![]() MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK2410 is N-Channel MOS Field Effect Transistor de- signed for high speed switching applications. FEATURES • Low On-Resistance RDS(on)1 = 40 m Ω MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 m Ω MAX. (@ VGS = 4 V, ID = 15 A) • Low Ciss Ciss = 1500 pF TYP. • High Avalanche Capability Ratings • Built-in G-S Gate Protection Diodes QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±30 A Drain Current (pulse)* ID(pulse) ±120 A Total Power Dissipation (Tc = 25 ˚C) PT1 35 W Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Single Avalanche Current** IAS 30 A Single Avalanche Energy** EAS 90 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE The information in this document is subject to change without notice. © 1994 DATA SHEET Document No. TC-2497 (O. D. No. TC-8029) Date Published November 1994 P Printed in Japan Drain Source Body Diode Gate Gate Protection Diode MP-45F(ISOLATED TO-220) 10.0 ±0.3 3.2 ±0.2 4.5 ±0.2 2.7 ±0.2 1.3 ±0.2 1.5 ±0.2 2.54 2.54 0.7 ±0.1 0.65 ±0.1 2.5 ±0.1 12 3 1. Gate 2. Drain 3. Source PACKAGE DIMENSIONS (in millimeters) |
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