M29W128GH70N3E datasheet(47/94 Pages) NUMONYX

Part #	M29W128GH70N3E

Description	128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory

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Manufacturer	NUMONYX [Numonyx B.V]

Direct Link	http://www.numonyx.com

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47 / 94 page

M29W128GH, M29W128GL

Command interface

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1.

Ad address, Dat data, BAd any address in the block, RD read data, PWDn password byte 0 to 7, PWAn password address (n = 0 to 7), X don’t

care. All values in the table are in hexadecimal.

2.

Grey cells represent read cycles. The other cells are Write cycles.

3.

DQ15 to DQ8 are ‘don’t care’ during unlock and command cycles. A22 to A16 are ‘don’t care’ during unlock and command cycles unless an

address is required.

4.

An Enter command sequence must be issued prior to any operation. It disables read and write operations from and to block 0. Read and write

operations from any other block are allowed.

5.

DATA = lock register content.

6.

Only one portion of password can be programmed or read by each Password Program command.

7.

The password portion can be entered or read in any order as long as the entire 64-bit password is entered or read.

8.

Protected and unprotected states correspond to 00 and 01, respectively.

9.

The Clear all NVPBs command programs all NVPBs before erasure in order to prevent the over-erasure of previously cleared non volatile

modify protection bits.

10.

The VPB program and VPB clear operations can be performed only with a timing /WE controlled not CE controlled.

11. If an Entry Command Set command is issued, an Exit Protection Command Set command must be issued to return the device to read mode.

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