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ZXRD1050PQ16 Datasheet(PDF) 24 Page - Diodes Incorporated |
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ZXRD1050PQ16 Datasheet(HTML) 24 Page - Diodes Incorporated |
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24 / 28 page  24 ISSUE 4 - OCTOBER 2000 N channel devices offer high efficiency performance for switching applications. This fami ly of MOSFETs from Zetex offers a combination of low on-resistance and low gate charge, providing optimum performance and high efficiency for switching applications such as DC - DC conversion. On resistance is low across the family, from only 40m Ω (max) for the ZXM64N02X part up to 180m Ω (max) for the ZXM61N02F. This means that on-state losses are minimised, improving efficiency in low frequency drive applications. Threshold voltages of 0.7V and 1V minimum allow the MOSFETs to be driven from low voltage sources. To minimise switching losses, and hence increase the efficiency of high frequency operation, gate charge (Qg) is small. The maximum Qg varies from 3.4nC to 16nC depending on which device is chosen. Crss (Miller capacitance) is also low, e.g. typically 30pF for the ZXM6203E6 device. This results in better efficiency in high frequency applications. P channel MOSFETs excel in load switching applications. The P-channel MOSFETs offer highly efficient pe rforma nce for low v olta ge loa d sw itching applications. This helps increase battery life in portable equipment. Minimum threshold voltage is low, only 0.7V or 1V, e n abling t h e MOS F ETs t o pr ov ide opt i mu m performance from a low voltage source. To ensure the device suitability for low voltage applications, drain to source voltage is specified at 20V or 30V. To minimise on-state losses, and improve efficiency in in low frequency drive applications, the on-resistance (RDS(ON)) is low across the range. For example, the ZXM64P03X has an RDS(ON) of only 100m Ω at a gate to source voltage of 4.5V. Gate source charge is also low, easing requirements for the gate driver. Maximum values range from 0.62nC for the ZXM61P03F, up to 9nC for the ZXM64P03X. Small outline surface mount packaging The products have been designed to optimise the performance of a range of packages. The parts are offered in SOT23, SOT23-6 and MSOP8 packages. The MSOP8 enables single or dual devices to be offered. The MSOP8 is also half the size of competitive SO8 devices and 20% smaller than TSSOP8 alternatives. Product performance The following performance characteristics show the capabilities of the ZXM64N02X. This device is recommended for use with certain configurations of the ZXRD DCDC controller circuit. ZXCM6 Series Low voltage MOSFETs Unique structure gives optimum performance for switching applications. ZXRD1000 SERIES |
Similar Part No. - ZXRD1050PQ16 |
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Similar Description - ZXRD1050PQ16 |
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