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ZXRD1050PQ16 Datasheet(PDF) 23 Page - Diodes Incorporated |
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ZXRD1050PQ16 Datasheet(HTML) 23 Page - Diodes Incorporated |
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23 / 28 page  Using ’P’ Channel Devices (No Bootstrap) All the preceeding examples utilise N channel MOSFET devices and a bootstrap circuit to provide full enhancement to the high side device. These circuits ha ve a ma ximum input volt age of 10V. For applications requiring a higher input voltage, using P channel devices for the main MOSFET will allow up to 18V operation. Typically this may be in a 12V to 5V converter circuit. If the same package size MOSFET devices are used, it is likely a higher on resistance will be encountered, with the result that efficiency will decline slightly. Fig 9 shows the efficiency plot for a P phase s y nc hronous 5 V c onv ert e r bas e d on t he ZXRD1050PQ16. The figure charts efficiency v output current at 12V input and 7V input. 50 55 60 65 70 75 80 85 90 95 100 0.1 1 10 Efficiency v I V =3.3V. OUT OUT I(A) OUT V =5V IN Fig.9 ’P’ Channel Device Efficiency (synchronous) 50 55 60 65 70 75 80 85 90 95 100 0.1 1 10 Efficiency v I V =5V. OUT OUT I (A) OUT V =7V IN V =12V IN 23 Fig.8 Efficiency for non-synchronous 5-3.3V conversion ZXRD1000 SERIES ISSUE 4 - OCTOBER 2000 |
Similar Part No. - ZXRD1050PQ16 |
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Similar Description - ZXRD1050PQ16 |
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