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ZXRD1033PQ16 Datasheet(PDF) 25 Page - Diodes Incorporated |
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ZXRD1033PQ16 Datasheet(HTML) 25 Page - Diodes Incorporated |
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25 / 28 page  25 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V(BR)DSS 20 V ID=250µA, VGS=0V Zero Gate Voltage Drain Current IDSS 1 µA VDS=20V, VGS=0V Gate-Body Leakage IGSS 100 nA VGS=± 12V, VDS=0V Gate-Source Threshold Voltage VGS(th) 0.7 V I D=250µA, V DS= VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.040 0.050 Ω Ω VGS=4.5V, ID=3.8A VGS=2.7V, ID=1.9A Forward Transconductance (3) gfs 6.1 S VDS=10V,ID=1.9A DYNAMIC (3) Input Capacitance Ciss 1100 pF VDS=15 V, VGS=0V, f=1MHz Output Capacitance Coss 350 pF Reverse Transfer Capacitance Crss 100 pF SWITCHING(2) (3) Turn-On Delay Time td(on) 5.7 ns VDD =10V, ID=3.8A RG=6.2Ω, RD=2.6Ω (Refer to test circuit) Rise Time tr 9.6 ns Turn-Off Delay Time td(off) 28.3 ns Fall Time tf 11.6 ns Total Gate Charge Qg 16 nC VDS=16V,VGS=4.5V , I D=3.8A (Refer to test circuit) Gate-Source Charge Qgs 3.5 nC Gate Drain Charge Qgd 5.4 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.95 V Tj=25°C, IS=3.8A, VGS=0V Reverse Recovery Time (3) trr 23.7 ns Tj=25°C, IF=3.8A, di/dt= 100A/ µs Reverse Recovery Charge(3) Qrr 13.3 nC (1) Measured under pulsed conditions. Width=300 µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. Performance Characterisation of ZXM64N02X ZXRD1000 SERIES ISSUE 4 - OCTOBER 2000 |
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