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NPTB00050 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc.

Part # NPTB00050
Description  Gallium Nitride 28V, 50W RF Power Transistor
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

NPTB00050 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc.

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NDS-007 Rev 6, April 2013
NPTB00050
Page 2
NPTB00050
Not recommended for new designs
Contact applications@nitronex.com for questions or support
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
-10 to 3
V
IG
Gate Current
80
mA
PT
Total Device Power Dissipation (Derated above 25°C)
55
W
qJC
Thermal Resistance (Junction-to-Case)
3.2
°C/W
TSTG
Storage Temperature Range
-65 to 150
°C
TJ
Operating Junction Temperature
200
°C
HBM
Human Body Model ESD Rating (per JESD22-A114)
1B (>500V)
MM
Machine Model ESD Rating (per JESD22-A115)
M2 (>100V)
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
VBDS
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 16mA)
100
-
-
V
IDLK
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V)
-
0.1
16
mA
On Characteristics
VT
Gate Threshold Voltage
(VDS = 28V, ID = 16mA)
-2.3
-1.8
-1.3
V
VGSQ
Gate Quiescent Voltage
(VDS = 28V, ID = 450mA)
-2.0
-1.5
-1.0
V
RON
On Resistance
(VGS = 2V, ID = 120mA)
-
0.25
0.40
W
ID
Drain Current
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, VGS = 2V)
9.2
9.8
-
A
DC Specifications: TC = 25°C


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