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NPTB00050 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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NPTB00050 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
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1 / 8 page  NDS-007 Rev 6, April 2013 NPTB00050 Page 1 NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power • 25W P3dB CW broadband power from 500-1000MHz • Characterized for operation up to 32V • 100% RF tested • Thermally enhanced industry standard package • High reliability gold metallization process • Lead-free and RoHS compliant • Subject to ECCN 3A982.a.1 export control Gallium Nitride 28V, 50W RF Power Transistor Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology Broadband 50 Watt, 28 Volt GaN HEMT RF Specifications (CW): VDS = 28V, IDQ = 450mA, Frequency = 3000MHz, TC = 25°C, Measured in Nitronex Test Fixture Symbol Parameter Min Typ Max Units P3dB Average Output Power at 3dB Gain Compression 45 50 - W P1dB Average Output Power at 1dB Gain Compression 33 38 - W GSS Small Signal Gain 10.5 11.5 - dB h Peak Drain Efficiency at POUT = P3dB 55 60 - % y Output mismatch stress, VSWR = 7:1, all phase angles, POUT = P1dB No Performance Degradation After Test Typical OFDM Performance: VDS = 28V, IDQ = 300mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame data, 10MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF. Frequency = 2400 to 2600MHz. POUT,AVG = 6W, TC=25°C. Symbol Parameter Typ Units GP Power Gain 12.0 dB h Drain Efficiency 23 % EVM Error Vector Magnitude 2.0 % |
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